features trenchfet power mosfet 100% r g tested SI7446BDP vishay siliconix new product document number: 72554 s-32411?rev. b, 24-nov-03 www.vishay.com 1 n-channel 30-v (d-s) fast switching mosfet product summary v ds (v) r ds(on) ( ) i d (a) 30 0.0075 @ v gs = 10 v 19 30 0.010 @ v gs = 4.5 v 17 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak so-8 bottom view n-channel mosfet g d s ordering information: SI7446BDP-t1?e3 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 30 v gate-source v oltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 19 12 continuous drain current (t j = 150 c) a t a = 70 c i d 15 9 a pulsed drain current i dm 50 a continuous source current (diode conduction) a i s 4.0 1.6 maximum power dissipation a t a = 25 c p d 4.8 1.9 w maximum power dissipation a t a = 70 c p d 3.0 1.2 w operating junction and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 21 26 maximum junction-to-ambient a steady state r thja 55 65 c/w maximum junction-to-case (drain) steady state r thjc 1.6 2.0 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI7446BDP vishay siliconix new product www.vishay.com 2 document number: 72554 s-32411?rev. b, 24-nov-03 mosfet specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 40 a drain - source on - state resistance a r ds(on) v gs = 10 v, i d = 19 a 0.0064 0.0075 drain - so u rce on - state resistance a r ds(on) v gs = 4.5 v, i d = 17 a 0.0084 0.010 forward t ransconductance a g fs v ds = 15 v, i d = 19 a 60 s diode forward voltage a v sd i s = 4.0 a, v gs = 0 v 0.75 1.2 v dynamic b total gate charge q g 22 33 gate-source charge q gs v ds = 15 v, v gs = 5.0 v, i d = 19 a 8.3 nc gate-drain charge q gd 4.7 gate-resistance r g 0.4 0.8 1.2 turn-on delay time t d(on) 20 30 rise time t r v dd = 15 v, r l = 15 16 25 turn-off delay time t d(off) v dd = 15 v , r l = 15 i d 1 a, v gen = 10 v, r g = 6 120 180 ns fall time t f 43 65 source-drain reverse recovery time t rr i f = 2.3 a, di/dt = 100 a/ s 40 80 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 40 50 012345 v gs = 10 thru 4 v 25 c t c = 125 c 2 v ? 55 c 3 v output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d
SI7446BDP vishay siliconix new product document number: 72554 s-32411?rev. b, 24-nov-03 www.vishay.com 3 typical characteristics (25 c unless noted) v sd ? source-to-drain voltage (v) 0.000 0.004 0.008 0.012 0.016 0.020 0246810 ? on-resistance ( r ds(on) ) v gs ? gate-to-source voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.000 0.003 0.006 0.009 0.012 0.015 0 1020304050 0 1 2 3 4 5 6 0 6 12 18 24 30 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 0 500 1000 1500 2000 2500 3000 3500 4000 0 4 8 12 16 20 c rss c oss c iss v ds = 15 v i d = 19 a v gs = 10 v i d = 19 a v gs = 10 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction temperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) t j = 150 c t j = 25 c i d = 19 a 60 10 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? source current (a) i s v gs = 4.5 v
SI7446BDP vishay siliconix new product www.vishay.com 4 document number: 72554 s-32411?rev. b, 24-nov-03 typical characteristics (25 c unless noted) ? 1.0 ? 0.8 ? 0.6 ? 0.4 ? 0.2 ? 0.0 0.2 0.4 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a threshold voltage variance (v) v gs(th) t j ? temperature ( c) safe operating area, junction-to-case v ds ? drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 1 ms ? drain current (a) i d 0.1 limited by r ds(on) t c = 25 c single pulse 10 ms 100 ms dc 10 s 100 s 0 60 100 20 40 power (w) single pulse power time (sec) 1 600 10 80 0.1 0.01 100 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 55 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
SI7446BDP vishay siliconix new product document number: 72554 s-32411?rev. b, 24-nov-03 www.vishay.com 5 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 1 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 0.05 0.02 single pulse
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